·上一文章:场效应管特点
					·下一文章:白光LED的开发状况
				
		       | 文字符号 | 中文 | English | 
| IF(AV) | 正向平均电流(整流管) | mean foreard current (of diode) | 
| IT(AV) | 通态平均电流 | mean on-state current | 
| VRSM | 反向不重复峰值电压 | non-reetitive peak reverse voltage | 
| VRRM | 反向重复峰值电压 | repetitive peak reverse voltage | 
| VDSM | 断态不重复峰值电压 | non-repetitive peak off-state voltage | 
| VDRM | 断态重复峰值电压 | repetitive peak off-state voltage | 
| VFM | 正向峰值电压(整流管) | peak forward voltage (of diode) | 
| VTM | 通态峰值电压 | peak on-state voltage | 
| Tjm | 最高等效结温 | maximum virtual junction temperature | 
| F | 紧固力 | mounting force | 
| IRRM | 反向重复峰值电流 | repetitive peak reverse current | 
| IDRM | 断态重复峰值电流 | repetitive peak of-state current | 
| VGT | 门极触发电压 | gate trigger voltage | 
| IGT | 门极触发电流 | gate trigger current | 
| Rjc | 结壳热阻 | junction-case thermal resistance | 
| Qrr | 反向恢复电荷 | reverse recovery charge | 
| ITM | 通态峰值电流 | peak on-state current | 
| IFM | 正向峰值电流(整流管) | peak forward current (of diode) | 
| ITSM | 通态浪涌电流 | surge on-state current | 
| dv/dt | 断态电压临界上升率 | critical rate of rise of off-state voltage | 
| di/dt | 通态电流临界上升率 | critical rate of rise of on-state current | 
| tgt | 门极控制开通时间 | gate controlled turn-on time | 
| tq | 电路换向关断时间 | cricuit commutated turn-off time | 
| IRMS | 通态方均根电流 | R.M.S. on-state current | 
| (dv/dt)c | 换向电压临界上升率(双向晶闸管) | critical rate of rise of commutating voltage(of bi-directional thyristor) | 
| trr | 反向恢复时间(二极管的) | reverse recovery time (of diode) | 
| ton | 开通时间 | turn on time | 
| ts | 存储时间 | storage time | 
| tf | 下降时间 | fall time |